Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy
Identifieur interne : 012042 ( Main/Repository ); précédent : 012041; suivant : 012043Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy
Auteurs : RBID : Pascal:00-0180277Descripteurs français
- Pascal (Inist)
- 8115G, 8115K, 6835B, 6855J, 8105E, Etude expérimentale, Gallium phosphure, Indium phosphure, Epitaxie phase vapeur, Agent surface, Bismuth, Croissance, Microscopie, Gallium composé, Indium composé, Semiconducteur III-V, Méthode MOCVD, Croissance semiconducteur, Couche épitaxique semiconductrice, Structure surface, Microscopie force atomique.
- Wicri :
- concept : Bismuth.
English descriptors
- KwdEn :
Abstract
The effect of the isoelectronic surfactant Bi on surface structure and ordering has been studied for GaInP semiconductor alloys grown by organometallic vapor-phase epitaxy. A small amount of Bi (trimethylbismuth) added during growth is found to result in disordering for layers grown using conditions that would otherwise produce highly ordered materials. An order of magnitude increase in the step velocity was observed by atomic-force microscopy. Bi completely eliminates three-dimensional islands on the singular (001) surface. © 2000 American Institute of Physics.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 013630
Links to Exploration step
Pascal:00-0180277Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy</title><author><name sortKey="Jun, S W" uniqKey="Jun S">S. W. Jun</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, College of Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, College of Engineering, University of Utah, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Fetzer, C M" uniqKey="Fetzer C">C. M. Fetzer</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, College of Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, College of Engineering, University of Utah, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Lee, R T" uniqKey="Lee R">R. T. Lee</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, College of Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, College of Engineering, University of Utah, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Shurtleff, J K" uniqKey="Shurtleff J">J. K. Shurtleff</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, College of Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, College of Engineering, University of Utah, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Stringfellow, G B" uniqKey="Stringfellow G">G. B. Stringfellow</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Department of Materials Science and Engineering, College of Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>Department of Materials Science and Engineering, College of Engineering, University of Utah, Salt Lake City</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0180277</idno><date when="2000-05-08">2000-05-08</date><idno type="stanalyst">PASCAL 00-0180277 AIP</idno><idno type="RBID">Pascal:00-0180277</idno><idno type="wicri:Area/Main/Corpus">013630</idno><idno type="wicri:Area/Main/Repository">012042</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Atomic force microscopy</term><term>Bismuth</term><term>Experimental study</term><term>Gallium compounds</term><term>Gallium phosphides</term><term>Growth</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Indium phosphides</term><term>MOCVD</term><term>Microscopy</term><term>Semiconductor epitaxial layers</term><term>Semiconductor growth</term><term>Surface structure</term><term>Surfactants</term><term>VPE</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8115G</term><term>8115K</term><term>6835B</term><term>6855J</term><term>8105E</term><term>Etude expérimentale</term><term>Gallium phosphure</term><term>Indium phosphure</term><term>Epitaxie phase vapeur</term><term>Agent surface</term><term>Bismuth</term><term>Croissance</term><term>Microscopie</term><term>Gallium composé</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Méthode MOCVD</term><term>Croissance semiconducteur</term><term>Couche épitaxique semiconductrice</term><term>Structure surface</term><term>Microscopie force atomique</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Bismuth</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The effect of the isoelectronic surfactant Bi on surface structure and ordering has been studied for GaInP semiconductor alloys grown by organometallic vapor-phase epitaxy. A small amount of Bi (trimethylbismuth) added during growth is found to result in disordering for layers grown using conditions that would otherwise produce highly ordered materials. An order of magnitude increase in the step velocity was observed by atomic-force microscopy. Bi completely eliminates three-dimensional islands on the singular (001) surface. © 2000 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>76</s2></fA05><fA06><s2>19</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy</s1></fA08><fA11 i1="01" i2="1"><s1>JUN (S. W.)</s1></fA11><fA11 i1="02" i2="1"><s1>FETZER (C. M.)</s1></fA11><fA11 i1="03" i2="1"><s1>LEE (R. T.)</s1></fA11><fA11 i1="04" i2="1"><s1>SHURTLEFF (J. K.)</s1></fA11><fA11 i1="05" i2="1"><s1>STRINGFELLOW (G. B.)</s1></fA11><fA14 i1="01"><s1>Department of Materials Science and Engineering, College of Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>2716-2718</s1></fA20><fA21><s1>2000-05-08</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>00-0180277</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The effect of the isoelectronic surfactant Bi on surface structure and ordering has been studied for GaInP semiconductor alloys grown by organometallic vapor-phase epitaxy. A small amount of Bi (trimethylbismuth) added during growth is found to result in disordering for layers grown using conditions that would otherwise produce highly ordered materials. An order of magnitude increase in the step velocity was observed by atomic-force microscopy. Bi completely eliminates three-dimensional islands on the singular (001) surface. © 2000 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15G</s0></fC02><fC02 i1="02" i2="3"><s0>001B80A15K</s0></fC02><fC02 i1="03" i2="3"><s0>001B60H35B</s0></fC02><fC02 i1="04" i2="3"><s0>001B60H55J</s0></fC02><fC02 i1="05" i2="3"><s0>001B80A05H</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>8115G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>8115K</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>6835B</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>6855J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>8105E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Gallium phosphure</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Gallium phosphides</s0><s2>NK</s2></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Indium phosphure</s0><s2>NK</s2></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Indium phosphides</s0><s2>NK</s2></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Epitaxie phase vapeur</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>VPE</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Agent surface</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Surfactants</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Bismuth</s0><s2>NC</s2></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Bismuth</s0><s2>NC</s2></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Croissance</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Growth</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Microscopie</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Microscopy</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Méthode MOCVD</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>MOCVD</s0></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Croissance semiconducteur</s0></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Semiconductor growth</s0></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Couche épitaxique semiconductrice</s0></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Semiconductor epitaxial layers</s0></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Structure surface</s0></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Surface structure</s0></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Microscopie force atomique</s0></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Atomic force microscopy</s0></fC03><fN21><s1>129</s1></fN21><fN47 i1="01" i2="1"><s0>0018M000063</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 012042 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 012042 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:00-0180277
|texte= Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy
}}
| This area was generated with Dilib version V0.5.77. |  |